在950～1100℃,20MPa,20～120min的工艺条件下,添加厚度均为10μm的Ni+Nb为中间层,对Ti2AlNb与GH4169真空扩散连接工艺进行了研究.利用扫描电镜(SEM)、能谱分析(EDS)和X射线衍射(XRD)对接头截面和断口的成分和相组成进行了分析.结果表明,添加Ni+Nb做中间层能实现Ti2AlNb与GH4169良好的连接.在GH4169与Ti2AlNb之间生成6层反应层,自GH4169侧依次为:Fe-Ni-Cr固溶体,Ni3Nb,Ni6Nb7,残留Nb层、Ti-Nb固溶体、高铌O相.在剪切试验中,接头沿Ni3Nb层与Nb层之间的Ni6Nb7层断裂.在1050℃,20MPa,40min工艺条件下,剪切强度达到最高,为460MPa.
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