利用电弧离子镀技术在TC4基体上制备CrNx薄膜,研究了脉冲偏压对薄膜的组织结构和力学性能的影响.结果表明,在一定范围内提高脉冲偏压可以显著减少薄膜表面熔滴的数量及尺寸,改善表面平整度,获得高质量的薄膜;同时随着脉冲偏压的升高,CrNx薄膜由CrN单相变为Cr,Cr2N和CrN三相组成,硬度与结合强度的峰值可分别达到24294.2MPa和43N;薄膜的摩擦系数在偏压幅值为-300V时具有最小值0.43.
参考文献
[1] | 张喜燕;赵永庆;白晨光.钛合金及应用[M].北京:化学工业出版社,2005:145-297. |
[2] | 唐宾,李咏梅,秦林,吴培强.离子束增强沉积CrN膜层及其微动摩擦学性能研究[J].材料热处理学报,2005(03):58-60. |
[3] | 郭军霞,蔡珣,陈秋龙.类金刚石碳膜的结构及其微动磨损行为[J].材料保护,2003(09):15-18. |
[4] | Eun Young Choi;Myung Chang Kang;Dong Hee Kwon;Dong Woo Shin;Kwang Ho Kim .Comparative studies on microstructure and mechanical properties of CrN, Cr-C-N and Cr-Mo-N coatings[J].Journal of Materials Processing Technology,2007(0):566-570. |
[5] | Park JH;Chung WS;Cho YR;Kim KH .Synthesis and mechanical properties of Cr-Si-N coatings deposited by a hybrid system of arc ion plating and sputtering techniques[J].Surface & Coatings Technology,2004(0):425-430. |
[6] | Lee DB.;Kwon SC.;Lee YC. .High temperature oxidation of a CrN coating deposited on a steel substrate by ion plating[J].Surface & Coatings Technology,2001(2/3):227-231. |
[7] | Sun CC;Lee SC;Dai SB;Fu YS;Wang YC;Lee YH .Surface free energy of CrNx films deposited using closed field unbalanced magnetron sputtering[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2006(23):8295-8300. |
[8] | WEE Myung-Yong;PARK Yong-Gwon;KIM Tack-Soo .Surface properties of CrN-coated Ti-6Al-4V alloys by arcionplating process[J].Materials Letters,2005,59:876-879. |
[9] | YAO Xiaoming;JIN Qi;FAN Duowang.Technology and properties of CrN films deposited by multi-arc ion plating[A].iNOW,2007:298-299. |
[10] | Bertrand G;Savall C;Meunier C;Lab Phys & Metrol Oscillateurs Equipe Elect Solides UPR 3203 F-25200 Montbeliard France. .Properties of reactively RF magnetron-sputtered chromium nitride coatings[J].Surface & Coatings Technology,1997(2/3):323-329. |
[11] | 田民波;刘德令.薄膜科学与技术手册(上)[M].北京:机械工业出版社,1980:7-9. |
[12] | 汪泓宏;田民波.离子束表面强化[M].北京:机械工业出版社,1992:156-161. |
[13] | LIEBERMAN M A .Model of plasma immersion ion implantation[J].Journal of Applied Physics,1989,66:2926-2929. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%