分别采用磁控溅射和溶胶-凝胶工艺制备了相同厚度的TiO2薄膜,并用以制备了金属-半导体-金属(MSM)结构TiO2基紫外探测器.通过紫外光电性能测试、扫描电子显微镜(SEM)观察及X射线衍射(XRD)分析,研究了TiO2薄膜生长工艺对探测器光电性能的影响规律.结果表明:磁控溅射工艺下,探测器的光电流虽然较低,但响应时间和暗电流远小于溶胶-凝胶工艺制备的探测器,其具备了高辐射灵敏度和快速响应特性.磁控溅射工艺制备的TiO2薄膜结构较为致密,晶界和缺陷较少,方阻较高,这是其取得优良的光电特性的原因.
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