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采用磁控溅射方法,在石英衬底E制备了光电性能优良的ZnO紫外探测器.通过紫外光电性能测试、扫描电子显微镜(SEM)观察及X射线衍射(XRD)分析,研究了ZnO紫外探测器的光电特性.结果表明:探测器的光电流高出暗电流近3个数量级,紫外波段的光响应高出可见光波段近2个数量级,所制备ZnO紫外探测器达到了高辐射灵敏度和可见盲特性的要求.

参考文献

[1] Razeghi M.;Rogalski A. .SEMICONDUCTOR ULTRAVIOLET DETECTORS [Review][J].Journal of Applied Physics,1996(10):7433-7473.
[2] 李慧蕊.新型紫外探测器及其应用[J].光电子技术,2000(01):45-51.
[3] 李喜来,徐军,曹付允,朱桂芳.导弹紫外预警技术研究[J].战术导弹技术,2008(03):70-72,88.
[4] Periale L;Peskov V;Braem A;Mauro D;Martinengo P;Picchi P;Pietropaolo F;Sipila H .Development of new sealed UV sensitive gaseous detectors and their applications[J].Nuclear Instruments and Methods in Physics Research, Section A. Accelerators, Spectrometers, Detectors and Associated Equipment,2007(1):189-192.
[5] T. Palacios;E. Monroy;F. Calle;F. Omnes .High-responsivity submicron metal-semiconductor-metal ultraviolet detectors[J].Applied physics letters,2002(10):1902-1904.
[6] A. Sciuto;F. Roccaforte;S. Di Franco;V. Raineri;S. Billotta;G. Bonanno .Photocurrent gain in 4H-SiC interdigit Schottky UV detectors with a thermally grown oxide layer[J].Applied physics letters,2007(22):223507-1-223507-3-0.
[7] CONTE G;MAZZEO G;SALVATORI S .Diamond deepUV position sensitive detectors[J].Proceedings of Spie,2006,6189(04):618910-618912.
[8] A. Bera;D. Basak .Carrier relaxation through two-electron process during photoconduction in highly UV sensitive quasi-one-dimensional ZnO nanowires[J].Applied physics letters,2008(5):053102-1-053102-3-0.
[9] LOOK D C;REYNOLDS D C;FANG Z Q et al.Point defect characterization of GaN and ZnO[J].Materials Science and Engineering B,1999,66(1/2/3):30-32.
[10] Ryu YR;Lee TS;Lubguban JA;White HW;Park YS;Youn CJ .ZnO devices: Photodiodes and p-type field-effect transistors[J].Applied physics letters,2005(15):3504-1-3504-3-0.
[11] Mingjiao Liu;Hong Koo Kim .Ultraviolet detection with ultrathin ZnO epitaxial films treated with oxygen plasma[J].Applied physics letters,2004(2):173-175.
[12] 赵延民,张吉英,张希艳,单崇新,姚斌,赵东旭,张振中,李炳辉,申德振,范希武.背入射Au/ZnO/Al结构肖特基紫外探测器[J].发光学报,2010(04):527-530.
[13] Ryu YR.;Look DC.;Wrobel JM.;Jeong HM.;White HW.;Zhu S. .Synthesis of p-type ZnO films[J].Journal of Crystal Growth,2000(1/4):330-334.
[14] Bang KH.;Hwang DK.;Jeong MC.;Sohn KS.;Myoung JM. .Comparative studies on structural and optical properties of ZnO films grown on c-plane sapphire and GaAs (001) by MOCVD[J].Solid State Communications,2003(11):623-627.
[15] Kumano H.;Ueta A.;Avramescu A.;Suemune I.;Ashrafi AA. .Luminescence properties of ZnO films grown on GaAs substrates by molecular-beam epitaxy excited by electron-cyclotron resonance oxygen plasma[J].Journal of Crystal Growth,2000(0):280-283.
[16] 祁洪飞,刘大博.薄膜生长工艺对TiO2基紫外探测器光电性能的影响[J].航空材料学报,2011(05):47-50.
[17] Battiston GA.;Porchia M.;Bertoncello R.;Caccavale F.;Gerbasi R. .CHEMICAL VAPOUR DEPOSITION AND CHARACTERIZATION OF GALLIUM OXIDE THIN FILMS[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1996(1/2):115-118.
[18] 边超 .ZnO荧光薄膜的制备及特性研究[D].郑州大学,2003.
[19] Bagnall DM;Chen YF;Zhu Z;Yao T;Koyama S;Shen MY;Goto T .Optically pumped lasing of ZnO at room temperature[J].Applied physics letters,1997(17):2230-2232.
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