本文采用直流磁控溅射的方法,分别在Si、Cu和NaCl基底上沉积了Ni-Mn-Ga薄膜,研究了不同基底、不同溅射条件和热处理对薄膜成分、组织形貌及结构的影响.结果表明,当溅射功率为22.5W,靶基距为40mm,溅射氩气压为0.1Pa时为最佳工艺参数.Si基片上薄膜比较致密均匀,Cu基片上薄膜则较为疏松,NaCl基片上薄膜表面分布着团簇颗粒,但三种薄膜均可见明显的岛状结构,表明薄膜的形成为核生长型机制.热处理前的薄膜具有部分非晶存在.
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