本文采用直流磁控溅射方法,在特殊的含氧气氛条件下,用高纯铂靶在氧化铝陶瓷基板上制备出高性能铂薄膜热敏电阻.利用扫描电子显微镜对铂电阻薄膜微观组织进行分析,利用X射线衍射分析仪对薄膜的物相及晶粒尺寸进行标定.测定薄膜铂电阻的阻温特性曲线,计算电阻温度系数(TCR)值.结果表明:含氧气氛下直流磁控溅射制备的薄膜铂电阻经过高温处理后完全脱氧,得到纯度高、结构致密均匀、附着强度高、热敏电阻性能优异的高性能铂薄膜电阻.
参考文献
| [1] | Lu J;Chu J et al.Preparation of thick Pb(Zr,Ti)O3(PZT) film by electrostatic spray deposition(ESD) for application in micro-system technology[J].Journal of Applied Physiology,2002,41(06):4317. |
| [2] | Kondo I;Yoneyama T .Formation of high adhesive and pure Pt layers on TiO2[J].Journal of Vacuum Science and Technology,1992,10(06):3456. |
| [3] | Lee W;Kim Y;Kim H .Pt-base electrodes and effects on phase formations and electrical properties of high dielectric thin films[J].Thin Solid Films,2002,416:66. |
| [4] | Kushida K A .Pt/TiN electrodes for stacked memory with polysilicon plug utilizing PZT films[J].Integrated Ferroelectrics,1996,13:113. |
| [5] | Kotecki D E .High-K dielectric materials for DRAM capacitors[J].Semiconductor International,1996,11:109-110. |
| [6] | hecq M;Hecq A .Oxygen induced preferred orientation of DC sputtered platinum[J].Journal of Vacuum Science and Technology,1981,18(02):219. |
| [7] | Song ZT.;Lin CL. .Microstructure and electrical properties of PbZr0.48Ti0.52O3 ferroelectric films on different Pt bottom electrodes[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2000(1/2):21-27. |
| [8] | Taylor DJ.;Larsen PK.;Geerse J. .FATIGUE OF ORGANOMETALLIC CHEMICAL VAPOR DEPOSITED PBZRXT1-XO3 THIN FILMS WITH RU/RUO2 AND PT/PT ELECTRODES[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1995(2):221-230. |
| [9] | Kunz K;Enoksson P;Stemme G .Highly sensitive triaxial silicon accelerometer with integrated PZT thin film detectors[J].Sensors and Actuators,2001,92:156. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%