Ni52Mn26Ga22薄膜的马氏体相变和磁电阻

金属功能材料, 2006, 13(3): 1-3. doi: 10.3969/j.issn.1005-8192.2006.03.001

Ni52Mn26Ga22薄膜的马氏体相变和磁电阻

丁娟 ^1, , 赵韦人 ^2, , 符史流 ^3, , 於元炯 ^4,

1.汕头大学物理系,广东,汕头,515063

2.汕头大学物理系,广东,汕头,515063

3.汕头大学物理系,广东,汕头,515063

4.浙江师范大学物理系,浙江,金华,321004

基金项目: 国家自然科学基金(50001010)

关键词：马氏体相变 , 薄膜 , 磁电阻

The Martensitic Transformation and Magnetoresistance of Ni52Mn26Ga22 Film

用电子束蒸发方法制备了多晶NiMnGa薄膜.用Ni52Mn26Ga22合金作靶材,衬底为<111>取向的单晶硅抛光面.沉积时衬底温度为773K.电子束蒸发在本底真空3×10-3Pa中进行.X射线衍射图谱表明薄膜在室温下为奥氏体相.电阻随温度的变化关系表明薄膜的马氏体相变开始温度约在256K,且相变滞后较小.在室温下的奥氏体具有正的磁电阻效应,在1T磁场下磁电阻为0.06%.马氏体的磁电阻很小,这种差异来源于电子结构的不同.

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Ni52Mn26Ga22薄膜的马氏体相变和磁电阻

The Martensitic Transformation and Magnetoresistance of Ni52Mn26Ga22 Film

参考文献