以W28的工业磨料用碳化硅粉和W10的高纯石墨粉为原料,采用氧化结合法制备出孔隙含量分别为38%、48%和61%的SiC预成形坯.研究了SiC多孔陶瓷的低温氧化烧结机理和石墨添加量对SiC陶瓷骨架烧结密度和尺寸变化的影响.研究结果表明:在1100℃烧结时,碳化硅和石墨粉同时发生氧化反应,碳化硅粉体通过自身氧化产生SiO2而焊接在一起,形成陶瓷骨架;石墨氧化去除后形成孔隙;SiC粉体间的本征孔隙和石墨去除后留下的孔隙构成三维互连通状态;因SiC氧化导致陶瓷骨架产生3%左右的线膨胀,膨胀量随石墨含量的增加而增大.
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