研究了Ti/Ni/Ti复合层TLP扩散连接Si3N4陶瓷时压力对接头形成的作用机制。结果表明,TLP来不及与陶瓷发生充分反应并形成高强度结合界面就已完全凝固,为形成高强度的结合界面,必须进一步发生固态扩散反应。只有当连接过程中施加足够的压力,才能保证TLP在其存在期间充分铺展陶瓷,并在TLP完全凝固后形成大量扩散通道,为固态扩散反应提供必要条件。
参考文献
[1] | LOCATELLI M R;Tomsia A P;Nakashima K.New strategies for joining ceramics for high temperature application[J].Key Engineering Materials,1995:157-190. |
[2] | SHALZ M L;Da1eish B J;Tomshia A P .Ceramic joining:Part I partial transient liquid-phase bonding of alumina via Cu/Pt/Cu multilayer[J].Journal of Materials Science,1994,29(12):1673-1684. |
[3] | SHALZ M L;Dalgleish B J;Tomshia A P .Ceramic joining:Part ⅡI bonding of alumina via Cu/Nb/Cu multilayer[J].Journal of Materials Science,1994,29(14):3679-3690. |
[4] | Tuau-Poku I;Dollar M;Massalski T B .A study of the transient liquid phase bonding process applied to a Ag/Cu/Ag sandwich joint[J].Metallurgical and Materials Transactions A:Physical Metallurgy and Materials Science,1988,19:675-686. |
[5] | 邹贵生,吴爱萍,任家烈,彭真山.耐高温陶瓷-金属连接研究的现状及发展[J].中国机械工程,1999(03):330-332. |
[6] | IINO Y .Partial transient liquid phase metals layer technique of ceramic-metal bonding[J].Journal of Materials Science Letters,1990,9(02):104-106. |
[7] | 邹贵生 .金属间化合物强化陶瓷接头的连接新技术及其机理[D].清华大学,2000. |
[8] | HansenM;Anderko K.Constituition of binary alloy (II)[M].New York: MCGRAW-Hill Book Company,INC,1958:807. |
[9] | Naka M;Taniguchi H;kamoto I .Heat resistant brazing of ceramics(Report III)-brazing of SiC using Ni-Ti filler metals[J].Transactions of JWRI(Joining and Welding Research Institute of Osaka University),1990,19(01):25-31. |
[10] | Nogi K .Wetting phenomena at high temperature(Part III)[J].Transactions of JWRI(Joining and Welding Research Institute of Osaka University),1993,22(01):183-188. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%