简要介绍了脉冲激光薄膜沉积(PLD)技术的物理原理、独具的特点,并且介绍了在PLD基础上结合分子束外延(MBE)特点发展起来的激光分子束外延(L-MBE),以及采用L-MBE技术制备硅基纳米PtSi薄膜的结果.
参考文献
| [1] | Narayan J;Tiwari P;Chen X et al.Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition[J].Applied Physics Letters,1992,61:1290. |
| [2] | Vispute RD;Talyansky V;Sharma RP;Choopun S;Downes M;Venkatesan T;Jones KA;Iliadis AA;Khan MA;Yang JW .Growth of epitaxial GaN films by pulsed laser deposition[J].Applied physics letters,1997(1):102-104. |
| [3] | Horwitz JS.;Stroud RM.;Carter AC.;Kim J.;Chang W.;Pond JM.;Kirchoefer SW.;Osofsky MS.;Koller D.;Chrisey DB. .Pulsed laser deposition as a materials research tool[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,1998(0):507-513. |
| [4] | Chowdhury R;Chen X;Narayan J .Pulsed laser deposition of epitaxial Si/TiN/Si (100) heterostrucures[J].Applied Physics Letters,1994,64(10):1236. |
| [5] | 李美亚;王忠烈;林揆训;熊光成 范守善 .脉冲激光制膜新技术及其在功能薄膜研究中的应用[J].功能材料,1998,29(02):133. |
| [6] | 魏柯BЛ;麦捷夫C M;吴国安;邓存熙.激光工艺与微电子技术[M].北京:国防工业出版社,1997:368-372. |
| [7] | 陈学康 .大功率脉冲激光纳米薄膜制备技术[J].真空科学与技术学报,1995,15(02):86. |
| [8] | Shibata Yoshihiko;Kaya Kiyoshi;Akashi Kageyasu et al.Epitaxial growth and surface acoustic wave properties of lithium niobate films growth by pulsed laser deposition[J].Journal of Applied Physics,1995,77(04):1498. |
| [9] | Tantigate C;Lee T;Safari A .Processing and properties of Pb(Mg1/3Nb2/3)O3-PbTiO 3 thin films by pudsed laser deposition[J].pl Phys Lett,1995,66(13):1611. |
| [10] | Hontsu S;Ishii J;Tabata H et al.Formation ofYBa2Cu3O 7-y/BaTiO 3 rmltructures by pulsed laser depotion for high-temperature superconducting device applications[J].Applied Physics Letters,1995,67(04):554. |
| [11] | Aruta C;Balestrino G;Desfeux R et al.Pulsed laser deposition of SrCuO2/C aCuO2 superlattices[J].Applied Physics Letters,1996,68(07):926. |
| [12] | Dai Fu Cui;Hui Sheng Wang;Zheng Hao Chen et al.Crystallographic and microstructural of BaTiO3 thin films grown on SrTiO3 by laser molecular beam epitaxy[J].Journal of Vacuum Science and Technology,1997,A15(02):275. |
| [13] | 李美成,陈学康,杨建平,王菁,赵连城.脉冲激光纳米薄膜制备技术[J].红外与激光工程,2000(06):31-35. |
| [14] | 杨国桢;吕惠宾;陈正豪 等.激光分子束外延和关键技术研究[J].中国科学A辑,1998,28(03):261. |
| [15] | 陈正豪.薄膜物理及其应用讲座 第八讲 激光分子束外延--一种研制薄膜的先进方法[J].物理,1995(12):719. |
| [16] | Kavanagh K L;Reuter M C;Tromp R M .High-temperature epitaxy of PtSi/Si(001)[J].Journal of Crystal Growth,1997,173:393. |
| [17] | Domashevskaya EP.;Kashkarov VM.;Yurakov YA. .SILICIDE FORMATION IN THIN FILM PT-SI(111) STRUCTURE BY USXES DATA[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1997(1/2):135-137. |
| [18] | Lin T L;Park J S;Gunapala S D et al.7-μm-cutoff PtSi infrared detector for high sensitivity MWIR applications[J].IEEE Transactions on Electron Devices,1995,16(03):94. |
| [19] | Meicheng Li;Xuekang Chen;Jing Wang.Formation of continuous nanometer PtSi thin film on Si by pulsed laser deposition (PLD). In:Millunchick J M,Barabasi AL,Jones E D,Modine Ned. Morphological and compositional evolutio n d heteroepitaxial semiconductor thin filma, 2000 MRS Spring Meeting, San Francisco[M].California U. S.A,2000 |
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