利用化学气相沉积工艺制备了SiC涂层,对涂层进行了SEM及XRD分析.考察了温度、载气和稀释气体对涂层微观结构的影响;对不同基体进行了对照试验.在1 100℃～1 300℃沉积时,随着温度的升高,SiC涂层沉积速度加快,SiC颗粒变大,同时颗粒间的孔隙也变大,涂层的致密度降低;Ar流量相对小时,制备的涂层致密、光滑.以SiCp/SiC作基体时,涂层和基体结合得很牢固,SiC颗粒会向基体中渗透,从而增强了涂层和基体之间的结合力.
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