针对电子束物理气相沉积(EB-PVD)设备的特点,研究基板温度对材料形成过程的影响.首先建立薄膜生长的基本扩散模型,然后用嵌入原子法(EAM)计算扩散激活能,以入射粒子跃迁概率表征入射原子在表面上的稳定程度,研究基板温度对低能Ni在Ni表面上扩散过程的影响.分别在较低(250～450K)和较高(750～1 000 K)两种温度下进行上述计算.研究结果表明,基板温度对跃迁概率的影响存在临界值,Ni为375 K;当基板温度低于375 K时,基板温度对跃迁概率影响很小,而当基板温度高于375 K时,跃迁概率随基板温度增加呈指数增长;基板温度较低(Ni低于375 K)时入射原子在表面上不扩散,易形成多孔疏松状材料,而较高的基板温度则有利于密实材料的形成.
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