综述了半导体材料SiC抛光技术的发展,介绍了SiC单晶片CMP技术的研究现状,分析了CMP的原理和工艺参数对抛光的影响,指出了SiC单晶片CMP急待解决的技术和理论问题,并对其发展方向进行了展望.
The development of CMP technology for SiC single crystal is described. The progress and problems of CMP for SiC single crystal are reviewed in the paper, the theory of CMP for SiC single crystal and the influence of technical parameters are discussed, then the future prospect of CMP is outlined.
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