以氮化硅为原料,以叔丁醇为溶剂,采用凝胶注模成型工艺和无压烧结工艺(17500C、保温1.5h、流动氮气气氛),制备出具有高强度和高气孔率的多孔氮化硅.在浆料中初始固相含量固定为15%体积分数的基础上,研究了烧结助剂含量对多孔氮化硅的气孔率、孔径尺寸分布、物相组成及显微结构的影响,分析了弯曲强度与结构之间的关系.结果表明,通过改变烧结助剂含量,所制备的多孔氮化硅的气孔率为52%-65%;气孔尺寸呈单峰分布,均匀性好,平均孔径为0.82-1.05μm;弯曲强度为64.4-193.5 MPa,且随烧结助剂含量增加呈先增大后减少,在烧结助剂含量为7.5%质量分数时达到最大值(193.5±10.1)MPa.
参考文献
| [1] | Yang J;Yang JF;Shan SY;Gao JQ;Ohji T .Effect of sintering additives on microstructure and mechanical properties of porous silicon nitride ceramics[J].Journal of the American Ceramic Society,2006(12):3843-3845. |
| [2] | Guang-Peng Jiang;Jian-Feng Yang;Ji-Qiang Gao .Porous Silicon Nitride Ceramics Prepared by Extrusion Using Starch as Binder[J].Journal of the American Ceramic Society,2008(11):3510-3516. |
| [3] | Tatsuki O .Microstructural design and mechanical properties of porous silicon nitride[J].Materials Science and Engineering A:Structural Materials Properties Microstructure and Processing,2008,498:5. |
| [4] | 余娟丽,王红洁,张健,严友兰,乔冠军.烧结温度对Si3N4显微结构及性能的影响[J].宇航材料工艺,2009(05):48-51. |
| [5] | Yoshiaki I;Naoki K;Tatsuki O .HiiSh performance porous silicon nitrides[J].Journal of the European Ceramic Society,2002,22:2489. |
| [6] | Ding S Q;Zeng Y P;Jiang D J .Oxidation bonding of porous silicon nitride ceramics with hish strength and low dielectric constant[J].Materials Letters,2007,61:2277. |
| [7] | Aranzazu D;Stuart H .Charaeterisation of porous silicon nitridematerials producedwith starch[J].Journal of the European Ceramic Society,2004,24:413. |
| [8] | Juanli Yu;Hongjie Wang;Hong Zeng .Effect of monomer content on physical properties of silicon nitride ceramic green body prepared by gelcasting[J].CERAMICS INTERNATIONAL,2009(3):1039-1044. |
| [9] | Xu J;Luo F;Zhu D M et al.Effect of presintering on the dielectric and mechanical properties of porous reaction-bonded silicon nitride[J].Materials Science and Engineering A:Structural Materials Properties Microstructure and Processing,2008,488:167. |
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