以含硅芳炔树脂为先驱体,采用先驱体浸渍法(PIP)制备了C/C-SiC复合材料.首先通过炭化T300/含硅芳炔树脂(CFRP)制备了多孔C/C-SiC预制体,并探究了炭化工艺对所得多孔C/C-SiC预制体性能的影响,制得的多孔C/C-SiC预制体弯曲强度为98 MPa;然后以含硅芳炔树脂溶液为浸渍剂,浸渍多孔C/C-SiC预制体,经过4次浸渍、固化、炭化后,得到致密的C/C-SiC复合材料,其弯曲强度提升到203 MPa,同时用XRD、SEM、TEM等手段表征了复合材料的微观结构,所得C/C-SiC复合材料主要成分为β-SiC及无定型碳.
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