报道用自行研制的LP-MOVPE设备,在蓝宝石(α-Al2O3)衬底上生长出以InGaN为有源区的蓝光和绿光InGaN/AlGaN双异质结结构以及InGaN/GaN量子阱结构的LED,其发射波长分别为430~450nm和520~540nm。
Zn and Si co-doped InGaN/AlGaN double-heterostructure andInGaN/GaN single quantum well structure were grown on Al2O3 substrate by LP-MOVPE. Blue LEDs with wavelength of 430~450nm and green LEDs with wavelength of 520~540nm were fabricated.
参考文献
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