GaP∶N绿色LED发光效率的提高有赖于对其结构参数的优化。根据载流子分布的连续性，由泊松方程自洽求解，得出了半导体n--n结势垒分布的计算方法。在此基础上，计入n-区内的电位降，计算了商用发光二极管p+-n--n结构的势垒分布，为整体结构的参数优化准备了必要的条件。
The improvement of the luminescent efficiency of GaP∶N green LEDdepends on optimization of the structural parameters. In this paper, according to the continuity of carrier profile, a method of calculating the carrier profile of a semiconductor n--n junction has been obtained, by solving the Poisson equation self-consistently. Based on this, and taking the potential drop within the n- region into account, the barrier distribution of a p+-n--n structure used in commercial light emitting diodes has been calculated, which prepared a necessary condition for optimizing the structural parameters.
参考文献
| [1] | 杨锡震, 赵普琴, 王亚非. n-n-结的势垒分布 [J]. 稀有金属， 1999， 23(增刊)： 132-133. |
| [2] | 陈显锋, 丁祖昌, 董绵豫. GaP∶N绿色发光二极管发光效率的提高 [A]. 1997年砷化镓及有关化合物半导体会议文集 [C]. 湖南 张家界， 1997, 304-306. |
| [3] | 叶良修. 半导体物理学（上） [M]. 北京： 高等教育出版社， 1984， 320. |
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