采用同型结模型模拟计算了源漏轻掺杂结构的关态漏极电流， 同时考虑热电子效应修正漏极电流模拟结果， 使漏极电流降低到10-11A量级， 晶体管的开关电流比值达到106量级。 模拟研究掺杂区浓度和宽度与多晶硅薄膜晶体管开关电流比的变化关系。
purpose of reducing the p-Si TFT off-state current, the structures of lightly doped drain (LDD) were used. Applying a homojunction model of semiconductor theory and considering the off-state current modified by hot carrier effect, the static-characteristics of LDD p-Si TFT were simulated. The on/off current switching ratios of p-Si TFT were investigated by a series of LDD doping concentrations and lengths.The LDD structures reduce TFT′s off-state current to 10-11 A and increase the on/off current switching ratios of p-Si TFT to 106. The results will be valuable referencepoints for designing and fabricating of p-Si TFT.
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