研究了纳米石墨晶的场发射特性.介绍了纳米石墨晶薄膜的制备方法,通过扫描电镜和Raman光谱对纳米石墨晶的结构进行了分析.场发射特性测试表明纳米石墨晶薄膜的场发射阈值电场为1.8V/μm.根据实验结果计算出纳米石墨晶的有效功函数在0.75～1.62eV之间.研究表明纳米石墨晶薄膜具有一些独到的特点,也非常适合场发射显示用冷阴极的制备.
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