在玻璃衬底上采用常规的PECVD法在低温(≤400℃)条件下制得大颗粒(直径>100nm)、择优取向(220)明显的多晶硅薄膜.选用的反应气体为SiF4和H2混合气体.加入少量的SiH4后,沉积速率提高了近10倍.分析认为,在低温时促使多晶硅结构形成的反应基元应是SiFm Hn(m+n≤3),而不可能是SiHn(n≤3)基团.
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