研究了不同厚度有源层的顶电极CuPc-OTFT器件的电学特性.发现器件的性能与有源层厚度有依赖关系,其中,有源层厚度为20 nm的器件性能最好.在有源层厚度大于20 nm时,有源层厚度的增大不但分去一部分栅电压而且还增大了源、漏电极的接触电阻,从而不利于器件性能的提高.但当有源层厚度小于20 nm以后器件的性能开始降低.我们认为当有源层厚度降低到一定程度时,有源层上表面的表面态会使有机材料的隙态浓度增加从而对沟道载流子迁移率产生不良影响以及使器件的阈值电压增大.
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