溅射法生长高度取向ZnO的实验研究

1.天津理工学院,材料物理所,天津,300191

2.天津理工学院,材料物理所,天津,300191

3.天津理工学院,材料物理所,天津,300191

4.天津理工学院,材料物理所,天津,300191

基金项目: 天津市自然科学基金(013800611) 天津市教委资助项目(20010205) 天津市重点学科建设基金

C-orientation ZnO Thin Films Sputtering on Si Substrates with Different Orientation

采用直流磁控反应溅射法,在3种衬底上获得c轴(002)定向生长的ZnO薄膜,并利用X射线衍射、PL谱对上述薄膜进行了实验研究.结果表明N型(100)Si衬底上,ZnO(002)取向度最高,分析认为是由于N型(100)Si与ZnO(002)晶格匹配度高所致.

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