利用脉冲激光烧蚀技术在硅衬底上制备了类石墨薄膜,以该薄膜为阴极进行了场致电子发射实验.当在阴阳极之间加电场后,两极之间出现了放电现象.放电之后,类石墨薄膜的阈值电场大大降低了.当电场为20 V/μm时,该薄膜的发射点密度可以达到105/cm2.利用Raman光谱、扫描电镜和X射线光电子谱对薄膜的表面形貌和微结构进行了测试.薄膜中的类石墨微结构对该薄膜的场致电子发射特性起了促进作用.场致电子发射实验显示类石墨薄膜作为冷阴极电子材料具有潜在的应用价值.
The graphite-like film was prepared on silicon substrate by pulsed laser ablation, and the field electron emission from the film was measured. After arc discharges between the graphite-like film cathode and the indium-tin-oxide (ITO) glass anode, the turn-on field of the graphite-like film decreases. The emission site density is in an order of 106/cm2 at an applied field of 20 V/μm. The morphology and the structure of the graphite-like film were measured by using Raman spectroscopy, scanning electron microscopy(SEM) and X-ray photoelectron spectroscopy (XPS). The surface structures of the film before and after the field emission measurement were investigated. The field electron emission measurement indicates that this kind of film can be a new cold cathode material.
参考文献
| [1] | WANG Wei-biao, GU Chang-zhi, JI Hong, et al. Field emission properties of epitaxial diamond film[J]. Chinese Journal of Liquid Crystals and Displays, 2003, 18(3) :164-173. |
| [2] | WANG Wei-biao, PENG Hong-yan, ZHANG Chuan-ping. Field emission performances of graphite nano-crystalline film[J].Chinese Journal of Liquid Crystals and Displays, 2002, 17(6) :445-449. |
| [3] | Himpsel F J, Knapp J A,Van Vechten J A, et al. Quantum photoyield of diamond (111)-A stable negetive-affinity emitter[J].Phys. Rev. B, 1979, 20 (2): 624-627. |
| [4] | Xu N S,Tzeng Y,Latham R V. Similarities in the 'cold' electron emission characteristics of diamond coated molybdenum electrodes and polished bulk graphite surfaces[J]. J. Phys. D: Appl. Phys. , 1993, 26: 1776 - 1780. |
| [5] | Feng Z,Brown I G,Ager J W. Electron emission from chemical vapor deposited diamond and amorphous carbon films observed with a simple field emission device[J]. J. Mater. Res. , 1995, 10(7): 1585 -1588. |
| [6] | Li Y,Yao N, He J, et al. Electron field emission from diamond thin films with various surface morphologies and surface resistances [J]. J. Phys. D: Appl. Phys. , 1997, 30: 2271 - 2275. |
| [7] | Ma Huizhong, Zhang Lan, Yao Ning, et al. The effect of nitrogen addition on field emission of diamond-like carbon films[J].Diamond and Related Materials, 2000, 9 : 1608 -1611. |
| [8] | Zhu W,Kochanski G P, Jin S, et al. Electron field emission from ion-implanted diamond[J]. Appl. Phys. Lett., 1995, 67(8) :1157 -1159. |
| [9] | Chi E J,Shim J Y,Baik H K. Effects of heat treatment on the field emission property of amorphous carbon nitride[A]. Technical Digest of IVMC97 [C]. South Korea, 1998. 127 -131. |
| [10] | PAN L S. Diamond sensors and vacuum microelectronics[J]. Mat. Res. Proc. , 1995, 416: 407 - 408. |
| [11] | Li Y,Yao N, Zhao G, et al. Electron field emission resulting high-density breakdown sites on amorphous carbon-polyimide composite films[J]. Jpn. J. Appl. Phys., 1998, 37: L547 - L549. |
| [12] | Obraztsov A N,Pavlovsky I Yu,Volkov A P. Low-voltage electron emission from CVD graphite films[J]. JETP Letters, 1998, 68:55-59. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%