研究了碳纳米管作为大电流密度场发射阴极的CVD生长情况与场发射性能.结果表明,通过CVD生长的碳纳米管的直径与催化剂颗粒的直径相近,其生长方向是随机的.根据薄膜厚度与催化剂颗粒的关系,认为通过控制催化剂薄膜的厚度可能会达到调节碳纳米管直径的目的.在实验中获得的碳纳米管具备了良好的场发射性能,在直径为0.13 mm的圆形面积上获得的碳纳米管场发射平均电流密度达到1.28 A/cm2.
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