制备Al/多孔硅/c-Si/Al结构的多孔硅发光二极管,利用其I-V特性关系,以及在不同温度下其I-V特性的变化,结合多孔硅的特殊微结构及性质,分析了多孔硅发光二极管中载流子的产生和传输过程;通过比较其发光猝灭前后J-V特性的变化,解释了发光猝灭的原因.提出了如果在低电场下能够实现大量载流子在限制性Si微粒中复合,是提高多孔硅电致发光效率的一个途径.
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