提出了一种新的晶化方法--金属诱导-准分子激光晶化法(MI-ELA).该方法在制备多晶硅(p-Si)薄膜中包括两个步骤:第一步是用镍金属诱导方法(MIC)通过热退火形成NiSi2;第二步是再通过准分子激光退火方法(ELA)晶化形成p-Si.通过用XRD、Raman与SEM测试,研究了p-Si的结晶性和表面形貌特征.研究发现,MI-ELA方法制备的p-Si与传统的ELA方法和MIC方法相比在形貌上不一样,而且从XRD的特征峰强度可以看出在结晶度上有进一步提高.这个结果源于用MIC方法形成的且与c-Si晶格匹配的NiSi2在ELA中起到晶核的作用.这种晶化方法说明,在ELA中,晶粒生长不再仅仅依赖于熔融非晶硅和氧化物表面上残存的随机的固体a-Si作为成核媒介.这种方法不但可以提供晶粒稳定生长条件,而且也可能使获得更大晶粒粒度的激光晶化能量展宽.
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