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  4. 硅衬底GaN基LED的研究进展

液晶与显示 , 2005, 20(5): 422-429. doi: 10.3969/j.issn.1007-2780.2005.05.013

硅衬底GaN基LED的研究进展

莫春兰 1, , 方文卿 2, , 王立 3, , 刘和初 4, , 周毛兴 5, , 江风益 6,

1.南昌大学,教育部发光材料与器件工程研究中心,江西,南昌,330047

2.南昌大学,教育部发光材料与器件工程研究中心,江西,南昌,330047

3.南昌大学,教育部发光材料与器件工程研究中心,江西,南昌,330047

4.南昌大学,教育部发光材料与器件工程研究中心,江西,南昌,330047

5.南昌大学,教育部发光材料与器件工程研究中心,江西,南昌,330047

6.南昌大学,教育部发光材料与器件工程研究中心,江西,南昌,330047

基金项目:   电子信息产业发展基金   国家科技攻关项目(2003AA302160)  

关键词： 发光二极管 , GaN , Si衬底

Development of GaN-based LED Grown on Si Substrate

与蓝宝石衬底相比,硅衬底具有低成本、大面积、高质量、导电导热性能好等优点,普遍认为使用Si片作GaN薄膜衬底有可能实现光电子和微电子的集成,因此Si基GaN的研究受到了广泛关注.本文回顾了Si衬底GaN基LED的研究进展, 同时简要介绍了在Si衬底上制备GaN基LED的实验结果,及研制出工作电压为3.6 V、串联电阻为31 Ω、输出功率近1 mW的Si衬底GaN基蓝光LED.

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