为了改善有机发光器件(OLEDs)的性能,在0～600 ℃不同温度下对ITO透明导电玻璃进行了退火处理.SEM观察到随退火温度的升高,ITO表面粗糙度增加;四探针电阻测试结果显示,在300 ℃以上温度退火后ITO表面电阻率有明显增加.用退火前后的ITO玻璃作为阳极制备了OLEDs,器件结构为ITO/TPD/Alq3/Al,比较器件的电流密度-电压特性曲线测试结果表明,ITO薄膜的热处理温度对OLEDs性能有显著的影响.
参考文献
| [1] | 邵作叶,郑喜凤,陈宇.平板显示器中的OLED[J].液晶与显示,2005,20(1):52-56. |
| [2] | Kim J S,Cacialli F,Cola A.Increase of charge carriers density and reduction of hall mobilities in oxygen-plasma treated indium-tin-oxide anodes[J].Appl.Phys.Lett.,1999,75 (1):19-21. |
| [3] | Osada T,Kugler T H,Salaneck W R,et al.Polymer based light-emitting devices:Investigations on the role of the indium-tin oxide(ITO) electrode[J].Synthetic Metals,1998,96:77-80. |
| [4] | Friend R H,Gymer R W,Holmes A B,et al.Electroluminescence in conjugated polymers[J].Nature,1999,397:121-128. |
| [5] | Hamberg I,Granqvist C G.Evaporated Sn-doped In2O3 films:Basic optical properties and applications to energy-efficient windows[J].J.Appl.Phys.,1986,60:123-160. |
| [6] | Chimed Ganzorig,Kwang-Joo Kwak,Kazuto Yagi,et al.Fine tuning work function of indium tin oxide by surface molecular design:Enhanced hole injection in organic electroluminescent devices[J].Appl.Phys.Lett.,2001,79(2):272-274. |
| [7] | Liu J M,Lu P Y,Weng W K.Studies on modifications of ITO surfaces in OLED devices by Taguchi methods [J] .Material Science Engineering B,2001,85:209-211. |
| [8] | Nuesch F,Forsythe E W,Le Q T.Importance of indium tin oxide surface acido basicity for charge injection into organic materials based light emitting diodes [J].J.Appl.Phys.,2000,87(11):7973-7980. |
| [9] | Huei-Tzong Lu,Meiso Yokoyama.Plasma preparation on indium-tin-oxide anode surface for organic light emitting diodes [J].Crystal Growth,2004,260:186-190. |
| [10] | 张麦丽,王秀峰,牟强,等.ITO玻璃光刻工艺的研究[J].液晶与显示,2005,20(1):22-26. |
| [11] | Chan I-Min,Hong Franklin C.Improved performance of the single-layer and double-layer organic light emitting diodes by nickel oxide coated indium tin oxide anode [J].Thin Solid Films,2004,450:304-311. |
| [12] | 占红明,饶海波,张化福.基于有机电致发光显示的透明导电膜ITO[J].液晶与显示,2004,19(5):396-390. |
| [13] | 刘彭义,段光凤,唐振方,等.基于八羟基喹啉铝有机发光器件的研制[J].华南师范大学学报,2004,(1):62-66. |
| [14] | Morgan D V,Aliyu Y H,Bunce R W,et al.Annealing effects on opto-electronic properties of sputtered and thermally evaporated indium-tin-oxide films [J].Thin Solid Films,1998,312:268-272. |
| [15] | Nguyen T P,Rendu P Le,Dinh N N,et al.Thermal and chemical treatment of ITO substrates for improvement of OLED perfor-mance[J].Synthetic Metals,2003,138:229-232. |
| [16] | Morikawa H,Fujita M.Crystallization and decrease in resistivity on heat treatment of amorphous indium tin oxide thin films prepared by d.c.magnetron sputtering[J].Thin Solid Films,1999,339:309-313. |
| [17] | Shi J M ,Tang C W.Doped organic electroluminescent devices with improved stability[J] .Appl.Phys.Lett.,1997,(70):1665-1667. |
| [18] | 姜浩,徐晓华,孙鑫,等.聚合物中光激发在电场作用下的转化[J] .物理学报,1999,48 (12):2327-2333. |
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