采用溶胶-凝胶工艺在普通玻璃片上制备了ZnO∶Al薄膜.通过XRD、UV透射谱和电学测试等分析方法研究了掺Al对薄膜的组织结构和光电性能的影响.分析表明:所制备的薄膜具有c轴择优取向,随着掺Al浓度的增加,(002)峰向低角度移动,峰强逐渐减弱.薄膜电阻率随掺Al浓度变化,当掺Al浓度为1.5 %(摩尔分数),薄膜电阻率降至6.2×10-4 Ω·cm.掺Al量的增加同时使得薄膜的禁带宽度变大,光吸收边出现蓝移现象.
参考文献
[1] | Jiang X,Wong F L,Fung M K,et al.Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices[J].Appl.Phys.Lett.,2003,83 (9):1875-1877. |
[2] | 杨田林,韩圣浩,张鹏,等.有机衬底和玻璃衬底ZnO∶Al透明导电膜的结构及光电特性对比研究[J].液晶与显示,2004,19(5):329-333. |
[3] | Deng H,Gong B,Petrella A J,et al.Characterization of the ZnO thin film prepared by single source chemical vapor deposition under low vacuum condition[J].Science in China (Series E),2003,46 (3):355-360. |
[4] | Mass J,Bhattacharya P,Katiyar R S.Effect of high substrate temperature on Al-doped ZnO thin films grown by pulsed laser deposition[J].Mater.Sci.Eng.B,2004,103 (1):9-15. |
[5] | Lee J H,Park B O.Characteristics of Al-doped ZnO thin films obtained by ultrasonic spray pyrolysis:effects of Al doping and an annealing treatment[J].Mater.Sci.Eng.B,2004,106 (3):242-245. |
[6] | Musat V,Teixeira B,Fortunato E,et al.Al-doped ZnO thin films by sol-gel method[J].Surf.Coatings Technol.,2004,180-181 (3):659-662. |
[7] | Deng H,Russell J J,Lamb R N,et al.Microstructure control of ZnO thin films prepared by single source chemical vapor deposition[J].Thin Solid Films,2004,458 (1-2):43-46. |
[8] | Kim K H,Park K C,Ma D Y.Structural,electrical and optical properties of aluminum doped zinc oxide films prepared by radio frequency magnetron sputtering[J].J.Appl.Phys.,1997,81 (12):7764-7772. |
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