在有效质量近似和变分原理的基础上,考虑量子点的三维约束效应,研究了GaN/AlGaN单量子点发光性质随量子点结构参数(量子点高度L和量子点半径R)的变化.结果表明:内建电场对GaN/AlGaN单量子点的发光波长和激子基态振子强度等发光性质有重要的影响;量子点高度的变化对量子点发光性质的影响要比量子点半径的变化对量子点发光性质的影响更明显.
参考文献
| [1] | Fiorentini V,Bernardini F,Sala F D,et al.Effects of macroscopic polarization in Ⅲ-Ⅴ nitride multiple quantum wells[J].Phys.Rev.B,1999,60(12):8849-8858. |
| [2] | Wan S P,Xia J B,Chang K.Effects of piezoelectricity and spontaneous polarization on electronic and optical properties of wurtzite III-V nitride quantum wells[J].J.Appl.Phys.,2001,90(12):6210-6216. |
| [3] | Shi J J,Gan Z Z.Effects of piezoelectricity and spontaneous polarization on localized excitons in self-formed InGaN quantum dots[J].J.Appl.Phys.,2003,94(1):407-415. |
| [4] | Shi J J,Xia C X,Wei S Y,et al.Exciton states in wurtzite InGaN strained coupled quantum dots:Effects of piezo-electricity and spontaneous polarization[J].J.Appl.Phys.,2005,97(8):083705-083712. |
| [5] | 危书义,吴花蕊,夏从新,等.耦合GaN/AlxGa 1-xN量子点中的激子特性[J].液晶与显示,2005,20(3):190-194. |
| [6] | Zhu B F.Oscillator strength and optical selection rule of excitons in quantum wells[J].Phys.Rev.B,1988,37(9):4689. |
| [7] | Mizel A,Shtrichman I,Gershoni D.Excitonic effects can lead to decreased intersubband oscillator strength[J].Phys.Rev.B,2002,65(23):235313(1-5). |
| [8] | Im J S,Kollmer H,Off J,et al.Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa 1-xN quantum wells[J].Phys.Rev.B,1998,57(16):R9435. |
| [9] | Fonoberov V A,Balandin A A.Excitonic properties of strained wurtzite and zinc-blende GaN/AlxGa 1-xN quantum dots[J].J.Appl.Phys.,2003,94(11):7178-7186. |
| [10] | Berkowicz E,Gershoni D,Bahir G,et al.Measured and calculated radiative lifetime and optical absorption of InxGa1-xN/GaN quantum structures[J].Phys.Rev.B,2000,61(16):10994-11008. |
| [11] | Bernardini F,Fiorentini V,Vanderbilt D.Spontaneous polarization and piezoelectric constants of III-V nitrides[J].Phys.Rev.B,1997,56(16):R10024-R10027. |
| [12] | Takeuchi T,Sota S,Katsuragawa M,et al.Quantum-confined stark effect due to piezoelectric fields in GaInN strained quantum wells[J].Jpn.J.Appl.Phys.,1997,Part 2,36(4A):L382-L385. |
| [13] | Goff S L,Stebe B.Influence of longitudinal and lateral confinements on excitons in cylindrical quantum dots of semiconductors[J].Phys.Rev.B,1993,47(3):1383-1391. |
| [14] | Koh T S,Feng Y P,Xu X,et al.Excitons in semiconductor quantum discs[J].J.Phys:Condens Matter,2001,13(7):1485-1498. |
| [15] | Xu X,Feng Y P.Excitons in coupled quantum dots[J].J.Phys.Chem.Solids,2003,64(11):2301-2306. |
| [16] | Que W.Excitons in quantum dots with parabolic confinement[J].Phys.Rev.B,1992,45(19):11036-11041. |
| [17] | Senger R T,Bajaj K K.Optical properties of confined polaronic excitons in spherical ionic quantum dots[J].Phys.Rev.B,2003,68(4):045313-045320. |
| [18] | Yoffe A D.Semiconductor quantum dots and related systems:electronic,optical,luminescence and related properties of low dimensional systems[J].Advances in Physics,2001,50(1):1-208. |
| [19] | Chiang Y C,Schulman J N.Interband optical transitions in GaAs-Ga1-xAlxAs and InAs-GaSb superlattices[J].Phys.Rev.B,1985,31(4):2069-2079. |
| [20] | Takeuchi T,Wetzel C,Yamaguchi S,et al.Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect[J].Appl.Phys.Lett.,1998,73(12):1691-1693. |
| [21] | Yamaguchi M,Yagi T,Azuhata T,et al.Brillouin scattering study of gallium nitride:elastic stiffness constants[J].J.Phys.Condens.Matter,1997,9(1):241-248. |
| [22] | Bernardini F,Fiorenitini V.Electronic dielectric constants of insulators calculated by the polarization method[J].Phys.Rev.B,1998,58(23):15292-15295. |
| [23] | Perlin P,Gorczyca I,Christensen N E,et al.Pressure studies of gallium nitride:Crystal growth and fundamental electronic properties[J].Phys.Rev.B,1992,45(23):13307-13313. |
| [24] | Takeuchi T,Amano H,Akasaki I.Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells[J].Jpn.J.Appl.Phys.,2000,Part I,39(2A):413-416. |
| [25] | Vurgaftman I,Meyer J R.Band parameters for III-V compound semiconductors and their alloys[J].J.Appl.Phys.,2001,89(11):5815-5875. |
| [26] | Chin V W L,Tansley T L,Osotchan T.Evidence of bistable shallow-deep silicon donors in GaAs-AlAs superlattices[J].J.Appl.Phys.,1994,75(11):7356-7360. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%