采用射频磁控溅射方法,在n型(100)Si基底上沉积了不同厚度(20～150 nm)纤锌矿结构的纳米AlN薄膜.在超高真空系统中测量了不同膜厚样品的场发射特性,发现阈值电场随着厚度的增加有增大的趋势.厚度为44 nm的AlN薄膜样品具有最低的阈值电场(10 V/μm),当外加电场为35 V/μm时,最高发射电流密度为284 μA/cm2.AlN薄膜场发射F-N曲线表明,在外加电场作用下,电子隧穿了AlN薄膜表面势垒发射到真空.
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