为了获得高的开口率,有必要优化设计参数和工艺容差.通常的过孔刻蚀工艺采用SF6基气体进行刻蚀,但是这种方法在金属和钝化层之间的选择性太小,因此,必须增加过孔的尺寸才行.为了克服上述问题,在本研究中用CF4气体代替 SF6气体进行刻蚀,结果在FFS 5.16(2.03 in)像素结构中,开口率提高了60 %.
In order to have high aperture, it is necessary to modify design parameters and process tolerance. General process for via etch process was to use SF6 base gas for etching. However, that showed too low selectivity between metal and passivation layers, therefore, via-hole size should be increased. In this study, CF4 gas instead of SF6 gas was used to overcome those two problems. Finally, it was found that more than 60 % aperture ratio was achieved in our FFS 5.16 cm(2.03 in) pixel structure.
参考文献
| [1] | Kim J H.Technology trend of high aperture TFT-LCD[J].The Korean Information Display,2001,2(1):37-44. |
| [2] | Stoffels W W,Stoffels E,Tachibana K.Polymerization of fluorocarbons in reactive ion etching plasma[J].J.Vac.Sci.Technol.,1998,16(1):87-95. |
| [3] | Kastenmeier B E E,Matsuo P J,Beulens J J,et al.Chemical dry etching of silicon nitride and silicon dioxide using CF4/O2/N2 gas mixtures[J].J.Vac.Sci.Technol.,1996,A 14(5):2802-2813. |
| [4] | Alfres Grill.Cold Plasma in Materials Fabrication[M].NY:Wiley Interscience,1994:233. |
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