为克服大尺寸显示面板中反应时间的延迟问题,采用低阻栅线是十分有益的,同样在小尺寸面板上也存在这种相互匹配的过程.然而,由于Al较高的氧化速度,铝合金和ITO材料接触性能并不太好.文章介绍了在室温ITO沉积过程中,通过增加ACX (Al-C-Ni)中Ni含量来减少ACX-ITO接触电阻.经室温ITO沉积后,接触电阻成功地减少到300 Ω,而且没有ACX引起的问题出现.
Low resistivity of gate line is very useful for large size panel by overcoming RC delay, also, for small size application with fine pitch process. However, Al-based alloy is not easily contact to ITO metal because of high oxidation rate. This study focused to reducing ACX-ITO contact resistance by increasing nickel composition and room temperature ITO deposition process. By the room temperature ITO deposition process, contact resistance was successfully reduced about 300 Ω and no ACX originated problem was occurred.
参考文献
[1] | Kim C W,Jeong C O,Song H S,et al.Pure Al and Al-alloy gate-line processes in TFT-LCDs[J].SID,1996,27:337-340 |
[2] | Seo H S,Kim I W,Lee G H,et al.Hillock-free Al-gate materials using stress-absorbing buffer layer for large-area AMLCDs[J].SID,1996,27:341-344. |
[3] | Seo H S,Choi J B,Yun D C,et al.Simple process of Hillock-free Al-gate metallization without ITO/Al contact problems for large-area TFT-LCDs[J].SID,1998,29:375-378. |
[4] | Kamiya K,Shiota J,Ishii H,et al.Al-Nd-Ti-alloy films and its application to 6.7-in.SVGA high-aperture a-Si TFT-LCDs[J].SID,1998,29:455-458. |
[5] | Kim C W,Lee J H,Nam H R,et al.High display quality TFT-LCD process[J].Euro Display,1996,26:591-594. |
[6] | Kubato T.ACX Material Broadens Choices,Possibilities in ITO Wiring[M].Japan:Display Devices,2005:16-21. |
[7] | Hayashi M,Inoue K,Noumi S.Low,et al.Resistivity Al alloy for large-size and high resolution TFT-LCDs[J].SID,1998,28:885-901. |
[8] | Choi D L,Ryu J L,Kim S W.Application of ACX (Al-C-Ni) alloys with low resistivity for S ingle gate layer[J].IDW,2006,(2):1369-1371. |
- 下载量()
- 访问量()
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%