采用磁控溅射和电子束热蒸发方法制备了ZnO-TTFT(ZnO基透明薄膜晶体管)器件,通过XRD和透射光谱对两种不同制作方法的样品性质进行分析比较,得出采用溅射法制备的ZnO-TTFT器件有源层的ZnO薄膜从结晶化程度、表面粗糙度及透过率都较采用电子束蒸发制得的ZnO薄膜优异,制得器件的有源层有较好的c-axis(002)方向择优取向,器件的平均透过率在85 %以上.研究了退火处理对器件性能的影响,发现快速热退火有利于改善薄膜的晶化,降低缺陷态密度,提高器件的透光性.
参考文献
| [1] | Masuda Satoshi,Kitamura Ken,Okumura Yoshihiro,et al.Transparent thin film transistors using ZnO as an active channel layer and their electrical properties[J].J.Appl.Phys.,2003,93(3):1624-1630. |
| [2] | Bae H S,Yoon M H,Kim J H,et al.Seongil photodetecting properties of ZnO-based thin-film transistors[J].Appl.Phys.Lett.,2003,83(25):5313-5315. |
| [3] | Fortunato E,Pimentel A,Pereira L,et al.High field-effect mobility zinc oxide thin film transistors produced at room temperature[J].J.Non-Crystalline Solids,2004,338-340(1 SPEC):806-809. |
| [4] | Fortunato Elvira M C,Barquinha Pedro M C,Pimentel Ana C M B G,et al.Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature[J].Appl.Phys.Lett.,2004,85(13):2541-2543. |
| [5] | 李燕,陈希明,熊英,等.溅射法生长高度取向ZnO的实验研究[J].液晶与显示,2004,19(3):174-178. |
| [6] | 陈甲林,赵青南,张君,等.射频磁控溅射法制备SnO2:Sb透明导电薄膜的光电性能研究[J].液晶与显示,2005,20(5):406-410. |
| [7] | 徐自强,邓宏,谢娟,等.掺Al对ZnO薄膜结构和光电性能的影响[J].液晶与显示,2005,6(20):503-506. |
| [8] | Xu Xiao-hong,Wu Hai-shun,Ma Wen-jin,et al.Study on the texture of thin films by using the pole-figure method[J].J.Inorganic Materials,2003,18(2):490-495. |
| [9] | Guo Bao-zeng,Wang Yong-ging,Zong Xiao-ping,et al.Theoretical study of electron transport in ZnO[J].Chin.J.Semiconductor,2003,24(7):723-726. |
| [10] | Larciprete M C,Sibilia C,Bertolotti M,et al.Optical limiting effects in hybrid electromechanical-metallo-dielectric Ag/ZnO photonic band gap structures[C]//Lasers and Electro-Optics Europe 2003 Conference,2003:271-276. |
| [11] | Yao Q J,Li D J.Fabrication and property study of thin film transistor using rf sputtered ZnO as channel layer[J].J.Non-Crystalline Solids,2005,351(40-42):3191-3194. |
| [12] | Bian Ji Ming,Li Xiao Min,GAO Xiang Dong et al.Effect of substrate temperature on the deposition process and microstructure of ZnO films grown by ultrasonic spray pyrolysis method[J].J.Inorganic Materials,2004,19(3):641-646. |
| [13] | Gao Xiang Dong,Li Xiao Min,Yu Wei Dong,et al.Growth and optical properties of nanocrystalline ZnO porous film by ultrasonic assisted successive ionic layer adsorption and reaction(uA-SILAR)method[J].J.Inorganic Materials,2005,20(4):965-970. |
| [14] | Pei Zhi Liang,Hang Xiao Bo,Wang Tie Gang,et al.Preparation and properties of ZnO:Al(ZAO) thin films deposition by DC reactive magnetron sputtering[J].ACTA Metallurgica Sinca,2005,41(1):84-88. |
| [15] | Carcia P F,McLean R S,Reilly M H,et al.Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering[J].Appl.Phys.Lett.,2003,82(7):1117-1119. |
| [16] | Bae H S,Choi CM,Kim Jae Hoon,et al.Dynamic and static photoresponse of ultraviolet-detecting thin-film transistors based on transparent NiOx electrodes and an n-ZnO channel[J].J.Appl.Phys.,2005,97(7):076104(1-3). |
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