ZnO是一种宽带隙的光电半导体材料,能应用于很多领域,如可用在压敏变阻器、声表面波器件、气敏元件、紫外光探测等.ZnO也可以作为有源层应用于薄膜晶体管(TFT)中.ZnO基薄膜晶体管具有以下突出优势:对于可见光部分平均具有80 %以上的透射率,迁移率可以高达36 cm2/V·s,开/关电流比大于106,可在较低温度(甚至室温)下制备.基于这些优点,ZnO TFT具有取代有源矩阵液晶显示器中常规a-Si TFT的趋势.同时对ZnO TFT的研究也推动了透明电子学的发展.本文阐述了ZnO TFT优越的电学性能,指出了其目前尚存在的不足,并对其发展前景进行了展望.
参考文献
| [1] | Carcia P F,McLean R S,Reilly M H,et al.ZnO thin film transistors for flexible electronics[J].Mat.Res.Soc.Symp.Proc.,2003,769(H7.2):1-6. |
| [2] | Kelly P J,Zhou Y,Postill A.A novel technique for the deposition of aluminium-doped zinc oxide films[J].Thin Solid Films,2003,426(1):111-116. |
| [3] | Nathan W Schmidt,Thomas S Totushek,William A Kimes,et al.Effects of substrate temperature and near-substrate plasma density on the properties of dc magnetron sputtered aluminum doped zinc oxide[J].J.Appl.Phys.,2003,94(9):5514-5521. |
| [4] | 李燕,陈希明,熊英,等.溅射法生长高度取向ZnO的实验研究[J].液晶与显示,2004,19(3):174-177. |
| [5] | 余旭浒,马瑾,计峰,等.射频磁控溅射制备ZnO:Ga透明导电膜及特性[J].半导体学报,2005,26(2):314-318. |
| [6] | Chang J F,Shen C C,Hon M H.Growth characteristics and residual stress of RF magnetron sputtered ZnO:Al films[J].Ceramics International,2003,29(3):245-250. |
| [7] | 李树玮,小池一步.ZnO材料的生长及表征[J].液晶与显示,2004,19(3):178-180. |
| [8] | Natsume Y,Sakata H.Electrical and optical properties of zinc oxide films post-annealed in H2 after fabrication by sol-gel process[J].Materials Chemistry and Physics,2003,78(1):170-176. |
| [9] | 刘博阳,杜国同,杨小天,等.MOCVD法氧化锌单晶薄膜生长[J].液晶与显示,2004,19(2):99-101. |
| [10] | Sakai K,Kakeno T,Ikari T,et al.Defect centers and optical absorption edge of degenerated semiconductor ZnO thin films gown by a reactive plasma deposition by means of piezoelectric photothermal spectroscopy[J].J.Appl.Phys.,2006,99(4):043508(1-6). |
| [11] | 赵鸣,王卫民,张昌松,等.ZnO低压压敏电阻陶瓷材料研究进展[J].材料科学与工程学报,2005,23(6):915-918. |
| [12] | Polyakov A Y,Smirnov N B,Govorkov A V,et al.Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO[J].J.Appl.Phys.,2003,94(1):400-406. |
| [13] | 刘延辉,曾大文,王辉虎,等.热氧化纳米Zn制备ZnO厚膜及其气敏特性的研究[J].传感技术学报,2005,18(3):43-46. |
| [14] | Hiromichi Ohta,Ken-ichi Kawamura,Masahiro Orita,et al.Current injection emission from a transparent p-n junction composed of p-SrCu2O2/n-ZnO[J].Appl.Phys.Lett.,2000,77(4):475-477. |
| [15] | Fang Guojia,Li Dejie,Yao Bao-Lun.Fabrication and characterization of transparent conductive ZnO:Al thin films prepared by direct current magnetron sputtering with highly conductive ZnO(ZnAl2O4) ceramic target[J].J.Crystal Growth,2003,247(3):393-400. |
| [16] | Kenji Nomura,Hiromichi Ohta,Kazushige Ueda,et al.Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor[J].Science,2003,300(5623):1269-1272. |
| [17] | Singh A V,Mehra R M,Wakahara A,et al.P-type conduction in codoped ZnO thin films[J].J.Appl.Phys.,2003,93(1):396-399. |
| [18] | Cheng Huachi,Chen Chiafu,LEE Chengchung.Thin-film transistors with active layers of zinc oxide (ZnO) fabricated by low-temperature chemical bath method[J].Thin Solid Films,2006,498(1):142-145. |
| [19] | Fortunato E,Barquinha P,Pimentel A,et al.Recent advances in ZnO transparent thin film transistors[J].Thin Solid Films,2005,487(2):205-211. |
| [20] | Hoffman R L,Norris B J,Wager J F.ZnO-based transparent thin-film transistors[J].Appl.Phys.Lett.,2003,82(5):733-735. |
| [21] | Junya Nishii,Faruque M Hossain,Shingo Takagi,et al.High mobility thin film transistors with transparent ZnO channels[J].Jpn.J.Appl.Phys.,2003,42(2):347-349. |
| [22] | Barquinha P,Fortunato E,Goncalves A,et al.Influence of time,light and temperature on the electrical properties of zinc oxide TFTs[J].Superlattices and Microstructures,2006,39(6):319-327. |
| [23] | Carcia P F,McLean R S,Reilly M H,et al.Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering[J].Appl.Phys.Lett.,2003,82(7):1117-1119. |
| [24] | Wager J F.Transparent electronics[J].Science,2003,300(5623):1245-1246. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%