应用ICP干法刻蚀工艺和自然光刻技术,制备了ITO表面粗化的GaN基LED芯片.聚苯乙烯纳米颗粒在于法刻蚀中作为刻蚀掩膜.通过扫描电镜(SEM)观察ITO薄膜的粗糙度,并且报道了优化的粗化工艺参数.结果表明,ITO表面粗化的GaN基LED芯片同传统的表面光滑的芯片相比在20 mA的驱动电流下,发光强度提高了70%.
To improve the extraction efficiency of GaN-based light-emitting diodes(LEDs),surface-textured Indium-Tin-Oxde(ITO)transparent ohmic contact layers have been fabricated by utilizing inductively coupled plasma etching technology and natural lithography with polystyrene spheres as the etching mask without destroying P-GaN.The morphologies of the textured ITO surface were examined and characterized by a scanning electron microscope.The optimized and detailed parameters of the texturing process are reported.The fabricated LEDs with the surface-textured ITO ohmic contacts produce a luminance intensity that exceeds that of the traditional planar-surface LEDs by around 70%at 20 mA dc current.
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