采用直流磁控溅射法在普通载玻片上制备了氧化铟锡透明导电薄膜(ITO).制备出的薄膜在大气环境下退火,退火温度分别为100℃、200℃和300℃,保温时间为1 h.对薄膜中铟锡原子的氧化程度及其光电特性进行了测试与分析.结果表明:退火温度的升高,有助于提高ITO薄膜中Sn原子氧化程度,从而提高了薄膜在可见光范围内的透射率;退火温度为200℃时,In原子氧化程度较高,薄膜中氧空位数量最多,电阻率最低为6.2×10-3Ω·cm.
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