在低真空(2.3×10-3 Pa)下采用射频磁控溅射法制备了ITO薄膜.溅射温度200 ℃,溅射气氛为氩气和氧气的混合气,溅射靶材为90 %氧化铟、10 %氧化锡的陶瓷靶.用场发射扫描电子显微镜和X衍射仪研究了薄膜的显微结构, 用X射线光电子能谱表征了薄膜的成分.ITO薄膜在可见光范围内有较高的透射率(80 %～95 %).在低工作气压(1 Pa)下,氧气流量比率[O2/(O2+Ar)]越小,薄膜的透射率越高、导电性越好.在高工作气压(2 Pa)下,制备得到低质量、低透射率的无定形薄膜.
Indium tin oxide (ITO) thin films were prepared using radio frequency magnetron sputtering under a quite low vacuum level of 2.3×10-3 Pa . The sputtering was done in an Ar and O2 gas mixture at 200 ℃. A ceramic In2O3:SnO2 target (SnO2 mass fraction 10 %) was used. The microstructures of the films were investigated by a field emission scanning electron microscope and an X-ray diffractometer. X-ray photoelectron spectroscopy was performed to characterize the compositions of the films. ITO films with a high transparency in the visible wavelength range (80 %～95 %) were obtained. At a low working pressure (1 Pa), the more highly transparent and conductive films were produced at the lower O2 flow ratio. At a high working pressure (2 Pa), low quality, low transparency and amorphous films were obtained.
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