用射频磁控溅射法在玻璃衬底上氩气气氛中制备出(Al, Zr)共掺杂的ZnO透明导电薄膜,研究了不同Zr掺杂浓度和薄膜厚度ZnO薄膜的结构、电学和光学特性.结果表明,在最佳沉积条件下我们制备出了具有(002)单一择优取向的多晶六角纤锌矿结构,电阻率为2.2×10-2 Ω·cm,且可见光段(320～800 nm)平均透过率达到85 %的ZnO透明导电薄膜.在150 ℃的条件下对(Al, Zr)共掺杂的ZnO薄膜进行1 h的退火处理,薄膜电阻率降低至8.4×10-3 Ω·cm.Zr杂质的掺入改善了薄膜的可见光透光性.
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