以阳离子表面活性剂——十六烷三甲基氯化铵(CTAC)作为添加刺,采用电沉积法在氧化铟锡玻璃基板上制备了ZnO薄膜.并研究了CTAC含量对阴极电流密度、结构、表面形貌、化学态和光学性能的影响.实验发现阴极电流密度和(002)择优取向随CTAC含量的增加而增加.电沉积氧化锌薄膜的表面形貌随CTAC含量的增加由小晶粒变为纳米棒,这表明CTAC在控制表面形貌方面有很重要的作用.X-射线光电子能谱表明Zn2p3/2,Zn2p1/2,O1s的峰位分别为1 020.78 eV、1 046.88 eV和530.8 eV.CTAC对电沉积的影响可能是由于CTAC的吸附作用改变了不同晶面的表面能和生长动力学.此外,研究了ZnO薄膜的光学性能,结果表明当CTAC含量为3.0 mmol/L时,薄膜具有较好的透光性和紫外发射性能.添加不同含量CTAC的ZnO薄膜禁带宽度介于3.27~3.52 eV.
参考文献
[1] | (O)zgür (U),Alivov Y I,Liu C,et al.A comprehensive review of ZnO materials and devices[J].J.Appl.PhyL,2005,98(4):041301-041303. |
[2] | Pearton S J.Norton D P,Ip K,et al.Recent progress in processing and properties of ZnO[J].Progress in Materials Science,2005,50(3):293-340. |
[3] | 刘博阳,杜国同,杨小天,等.MOCVD法氧化锌单晶薄膜生长[J].液晶与显示,2004,19(2):99-102. |
[4] | 肖华,王华,任鸣放,等.基于磁控溅射技术的ZAO透明导电薄膜及靶材的研究[J].液晶与显示,2006,21(2):158-164. |
[5] | Gu Y,Li X,Yu W,et al.Microstructures,electrical and optical characteristics of ZnO thin films by oxygen plasma-assisted pulsed laser deposition[J].J.Crystal Growth,2007,305(1):36-39. |
[6] | Lu Y M,Wang X,Zhang Z Z,et al.Effects of low-temperature-grown ZnO buffer layer and zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE[J].J.Crystal Growth,2007,301-302(1):373-377. |
[7] | 徐自强,邓宏,谢娟,等.掺Al对ZnO薄膜结构和光电性能的影响[J].液晶与显示,2005,20(6):503-507. |
[8] | Izaki M,Omi T.Transparent zinc oxide films prepared by electrochemical reaction[J].Appl.Phys.Lett.,1996,68(17):2439-2440. |
[9] | Peulon S.Lincot D.Cathodic etectrodeposition from aqueous solution of dense or open-structured zinc oxide films[J].Advanced Materials,1996,8(2):166-170. |
[10] | Zhang L,Chen Z,Tang Y,et al.Low temperature cathodic electrodeposition of nanocrystalline zinc oxide thin film[J].Thin Solid Films,2005,492(1-2):24-29. |
[11] | Mei Y F,Siu G F,Fu R K Y,et al.Room-temperature electrosynthesized ZnO thin film with strong(002)orientation and its optical properties[J].Appl.Surf.Sci.,2006,252(8):2973-2977. |
[12] | Marotti R E,Guerra D N,Bello C,et al.Bandgap energy tuning of electrochemically grown ZnO thin films by thickness and electrodeposition potential[J].Solar Energy Materials and Solar Cells,2004,82(1-2):85-103. |
[13] | Fathy N,Kobayashi R,Ichimura M.Preparation of ZnS thin films by the pulsed electrochemical deposition[J].Materials Science and Engineering B,2004,107(3):271-276. |
[14] | Sun F,Guo Y,Song W,et al.Morphological control of Cu2O micro-nanostructure film by electrodeposition[J].J.Crystal Growth,2007,304(2):425-429. |
[15] | Gao Y F,Nagai M,Masuda Y,et al.Electrochemical deposition of ZnO film and its photoluminescence properties[J].J.Crystal Growth,2006,286(2):445-450. |
[16] | Feng X.Feng L,Jin M,et al.Reversible super-hydrophobicity to super-hydrophilicity transition of aligned ZnO nanorods films[J].J.American Chemistry Society,2004,126(1):62-63. |
[17] | Liu B,Zeng H C.Fabrication of ZnO"dandelions"via a modified kirkendall process[J].J.American Chemistry Society,2004,126(51):16744-16746. |
[18] | Saito N,Haneda H,Sekiguchi T,et al.Low-temperature fabrication of light-emitting zinc oxide micropatterns using self-assembled monolayers[J].Advanced Materials,2002,14(6):418-421. |
[19] | lzaki M,Watase S,Takahashi H.Low-temperature electrodeposition of room-temperature ultraviolet-light-emitting zinc oxide[J].Advanced Materials,2003,15(23):2000-2002. |
[20] | Xu L,Guo Y,Liao Q,et al.Morphological control of ZnO nanostructures by electrodeposition[J].J.Physics Chemistry B,2005,109(28):13519-13522. |
[21] | 侯旭峰,荆海,谷长栋,等.高阻ITO基板上电化学沉积ZnO薄膜的研究[J].液晶与显示,2007,22(1):15-20. |
[22] | Chou T L,Ting J M.Deposition and characterization of a novel integrated ZnO nanorods/thin films structure[J].Thin Solid Films,2006,494(1-2):291-295. |
[23] | Han W G,Kang S G,Kim T W,et al.Effect of thermal annealing on the optical and electronic properties of ZnO thin films grown on p-Si substrates[J].Appl.Surf.Sci.,2005,245(1-4):384-390. |
[24] | Li H,Liu H,Wang J,et al.Influence of annealing on ZnO films grown by metal-organic chemical vapor deposition[J].Materials Lett.,2004,58(27-28):3630-3633. |
[25] | Chen Y,Bagnall D M,Koh H,et al.Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire:Growth and characterization[J].J.Appl.Phys.,1998,84(7):3912-3918. |
[26] | Vanheusden K,Warren W L,Seager C H,et al.Mechanisms behind green photoluminescence in ZnO phosphor powders[J].J.Appl.Phys.,1996,79(10):7983-7990. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%