对于绿光OLED多层器件,在高真空条件下,利用真空蒸镀的方法,在各功能层蒸镀完成后,又在阴极的外面蒸镀了一层硒薄膜封装层,然后再按一般方法进行封装.对比了正常封装与增加Se薄膜封装层后器件的性能,对比实验中封装过程都未加干燥剂.研究发现未加Se薄膜封装层器件的半衰期为2 880 h,增加Se薄膜封装层器件的半衰期接近4 000 h,Se薄膜封装层的增加将器件的寿命延长了1.4倍;研究还发现Se薄膜封装层基本不影响器件的电流-电压特性、色坐标等光电性能.
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