为了提高薄膜晶体管液晶显示器的开口率,研究了在优化的钝化层沉积条件下的过孔尺寸.结果表明,随着钝化层沉积温度的升高,钝化层的刻蚀率在下降,过孔的尺寸变小.当钝化层沉积温度在360℃时,过孔尺寸为8.20 μm.
In order to improve the aperture ratio of TFT LCD, the size of via hole is studied by optimizing the deposition temperature of the passivation layer. When the passivation layer is deposited at higher temperature, the etch rate of via hole decreased and the via hole size ten-ded to smaller. The size of via hole is 8.20 μm with the passivation layer deposited at 360 ℃.
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