透明非晶态氧化物半导体薄膜晶体管的研究进展

液晶与显示 , 2009, 24(2): 210-216. doi: 10.3969/j.issn.1007-2780.2009.02.011

透明非晶态氧化物半导体薄膜晶体管的研究进展

王中健 ^1, , 王龙彦 ^2, , 马仙梅 ^3, , 付国柱 ^4, , 荆海 ^5,

1.中国科学院,长春光学精密机械与物理研究所,北方液晶工程研究开发中心,吉林,长春,130031;中国科学院,研究生院,北京,100039

2.中国科学院,长春光学精密机械与物理研究所,北方液晶工程研究开发中心,吉林,长春,130031;中国科学院,研究生院,北京,100039

3.中国科学院,长春光学精密机械与物理研究所,北方液晶工程研究开发中心,吉林,长春,130031;中国科学院,研究生院,北京,100039

4.中国科学院,长春光学精密机械与物理研究所,北方液晶工程研究开发中心,吉林,长春,130031

5.中国科学院,长春光学精密机械与物理研究所,北方液晶工程研究开发中心,吉林,长春,130031

基金项目: 长春市高技术成果产业化计划项目(2006303) 国家自然科学基金(60576056)

关键词：透明非晶态氧化物半导体 , 薄膜晶体管 , 有源矩阵有机发光二极管 , 有源矩阵电泳显示器 , 集约化模型

Research and Progress in Transparent Amorphous Oxide Semiconductor Thin Film Transistors

透明非晶态氧化物半导体薄膜晶体管(TAOS-TFT)以其诸多优势受到研究人员的青睐,最近几年发展迅速.文章以传统薄膜晶体管做对照,详细介绍了TAOS-TFT的原理、结构和性能,总结出TAOS-TFT相对于Si基TFT具有制备温度低、均一性好、迁移率高、对可见光全透明和阈值电压低等5方面的优势,指出了TAOS-TFT在进一步实用化过程中所面临的几个重要问题,其中最为重要的是需要尽快建立自身的集约化物理模型.

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