在TFT-LCD的生产过程中,阵列金属被腐蚀是造成TFT-LCD产品缺陷(亮线、薄亮线等)的常见原因.文章对实际生产过程中阵列基板的一种典型腐蚀性缺陷,应用扫描电子显微镜(SEM)、聚焦离子柬(FIB)和能谱仪(EDS)等工具,并且结合BO(Business Objects)、CIM(Computer Integrated Manufacturing)等数据统计软件进行了分析.确定了造成缺陷的原因是栅金属暴露在含氯元素的酸性气体中被腐蚀,还确定了酸性气体的泄露源,并且推断出其形成机理:腐蚀发生在栅金属刻蚀(Gate Etch)工艺和多层膜沉积(Multi-Deposition)工艺之间,随后的多层膜沉积工艺的抽真空过程促进了缺陷的进一步形成.另外,针对发生此种缺陷时的应急措施进行了探讨.
There are hundreds of defects happening during TFT-LCD process, especially during array process. Eroded array metal line is one of defects that can cause bright line or thin bright line defect. In this paper, this typical defect was analyzed by SEM, FIB, EDS and statistical software such as BO(Business Objects) and CIM(Computer Integrated Manufac-turing). The results show that the defect occurred mainly when the metal layer was eroded by hydrochloric acid gas between Gate Etch process and Multi-Deposition process, and the leakage source of acid gas was identified. The hump in defect position was formed when vacuumizing during Multi-Deposition process. In addition,the emergency measures for this defect were also discussed.
参考文献
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