在陶瓷衬底上通过磁控溅射方法镀上金属Ti层后,改用CH4为溅射气体制备一层碳化物过渡层,利用微波等离子体化学气相沉积(MPCVD)法制备出类球状微米金刚石聚晶薄膜.利用扫描电子显微镜、拉曼光谱和x-射线衍射分析了薄膜的结构和表面形貌.测试了类球状微米金刚石聚晶膜的场致电子发射特性,有过渡层制备的类球状微米金刚石聚晶膜的场发射开启电场仅为0.9 V/μm,在2.5 V/μm的发射电场下电流密度是10.8 mA/cm2,而无过渡层制备的类球状微米金刚石聚晶膜的开启电场为1.27 V/μm,在2.5V/μm的发射电场下电流密度是0.5 mA/cm2.实验结果表明,有碳化物过渡层的类球状微米金刚石聚晶薄膜的场发射特性效果更好.
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