本文用等温凝固技术研究了Au-In合金在陶瓷封装装片中的应用.结果表明,通过一种多层结构设计和机械振动的作用,硅芯片可在250oC～300oC、2.1N/mm2的静态加载压力和流量为0.5l/min的氮气环境下焊接到氧化铝衬底上,绝大多数样品的剪切强度符合MILSTD883D美国军方标准,焊层具有良好的可靠性,在-55oC～+125oC之间1750周热循环试验后,剪切强度仅有微量下降.同时,用金相方法对热循环试验前后的焊层微结构进行了分析.
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