非掺半绝缘GaAs单晶的垂直梯度凝固生长

功能材料与器件学报 , 2000, 6(2): 125-79. doi: 10.3969/j.issn.1007-4252.2000.02.011

非掺半绝缘GaAs单晶的垂直梯度凝固生长

赵福川 ^1, , 谈惠祖 ^2, , 杜立新 ^3, , 莫培根 ^4,

1.中国科学院上海冶金研究所,上海,200050

2.中国科学院上海冶金研究所,上海,200050

3.中国科学院上海冶金研究所,上海,200050

4.中国科学院上海冶金研究所,上海,200050

关键词：垂直凝固(VGF) , 半绝缘GaAs单晶 , 晶体生长

VERTICAL GRADIENT FREEZE GROWTH OF UNDOPED SEMI-INSULATING GaAs CRYSTALS

研究了非掺GaAs半绝缘单晶的液封垂直梯度凝固法(VGF)生长技术,解决了Si沾污和C浓度的控制问题,得到了直径2英寸非掺半绝缘低位错单晶.测试表明:该单晶的位错密度较LEC单晶下降近一个数量级,电学参数与LEC单晶类似,接近国外VGF单晶的参数指标.

参考文献

[1]	MULLIN J B;HERITAGE J;HOLLIDAY C H et al.[J].Journal of Crystal Growth,1968,34:281.
[2]	MATSUMOTO Y;WATANABE H .[J].Japanese Journal of Applied Physics,1982,21:L515.
[3]	OBOKATA T;MATSUMURA T;TERASHIMA K et al.[J].Japanese Journal of Applied Physics,1984,23:L602.
[4]	BONNET M.Proc GaAs Ic Symp[C].New Orlean,1982
[5]	TAJIMA M;OKADA Y .[J].Physical Review B,1984,116:404.
[6]	BROZEL M R;GRANT I;WARE R M et al.[J].Journal of Applied Physics,1984,56:1109.
[7]	RUMSBY D;WARE R M;SMITH B.[J].GaAs IC Symposium Tech Digest,1983:34.
[8]	FREIDENREICH B E;BRONSEMA K D;KORZENIOWSKI Z.[J].Semi-insulating Materials,1992:105.
[9]	AZUMA K .[P].Japanese Patent:60-11299,1983.
[10]	GAULT W A;MONBEGE E M;CLEMANS J E .[J].Journal of Crystal Growth,1986,74:491.
[11]	MONBERG E M;BROWN H;BONNER C E .[J].Journal of Crystal Growth,1989,94:109.
[12]	Frank C.;Hein K. .GROWTH OF SEMIINSULATING GAAS CRYSTALS BY VERTICAL GRADIENT FREEZE TECHNIQUE[J].Crystal Research and Technology: Journal of Experimental and Industrial Crystallography,1995(7):897-909.
[13]	BOURRET E D;MERK E C .[J].Journal of Crystal Growth,1991,110:395.
[14]	BLANC J;WEISBERG L R .[J].Nature,1961,192:155.
[15]	MARTIN G M;FARGES J P;JACOB G et al.[J].Journal of Applied Physics,1980,51:2840.
[16]	HANNING C;BUHRIG E;GARTNER G .[J].Crystal Research and Technology,1999,34:189.

上一张下一张

上一张下一张

计量

下载量()
访问量()

作者相关

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%