GaN具有宽禁带、高击穿电压、异质结沟道中高峰值电子漂移速度和高薄层电子浓度等特点,是大功率和高温半导体器件的理想化合物半导体材料.宽禁带Ⅲ-Ⅴ族化合物半导体的性能和研究进展已经使大功率紫外光/蓝光/绿光光发射二极管走向商业市场,证明InGaAs/GaN/AlGaAs紫罗兰色异质结激光器能够在室温和脉冲或连续波条件下工作,是性能优越的光电器件的理想材料.本文综述了上述研究成果.
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