通过低温和高磁场下的磁输运测量,首次在Al0.22Ga0.78N/GaN异质结中观察到了舒勃尼科夫-德哈斯振荡的双周期特性,发现在Al0.22Ga0.78N/GaN异质结的三角势阱中产生了二维电子气(2DEG)的第二子带占据,发生第二子带占据的阈值2DEG浓度估算为7.2×1012 cm-2,在阈值2DEG浓度下第一子带和第二子带能级的距离计算为75 meV.
Magnetoresistance of modulation-doped Al0.22Ga0.78N/GaN heterostructures has been studied by means of magnetotransport measurements at low temperatures and high magnetic fields. The double periodicity of the Shubnikov-de Hass oscillations was observed. It was found that the occupation of the first two subbands by the two-dimensional electron gas(2DEG) in the triangular quantum well at the Al0.22Ga0.78N/GaN heterointerface took place when the 2DEG sheet concentration reached 7.2×1012 cm-2. The energy separation of the first and the second subbands in the quantum well was determined to be 75 meV just before the second subband was occupied.
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