采用离子束增强沉积的方法，改变氧分压，在硅基体表面制备出了不同组分及不同取向的氧化钛薄膜。采用XRD，掠角衍射以及XPS分析方法对薄膜的成分、结构和取向进行了分析，并通过RBS分析计算出了薄膜的O/Ti比。实验结果发现，所制备的氧化钛薄膜为具有一定择优取向的多晶膜，薄膜内TiO、Ti2O3和TiO2共同存在。当氧分压低于8.4×10－4Pa时，氧化钛薄膜的成分以TiO为主，且TiO的取向随氧分压的增加从（220）向（031）转变，氧分压对薄膜取向的影响较大。当氧分压高于8.6×10－4Pa时，氧化钛薄膜的成分以具有（100）择优取向的金红石型TiO2为主，含有少量其他结构的TiO2和低价Ti，其成分及取向相对较为稳定，对氧分压的变化不敏感。
A series of titanium oxide thin films have been synthesized on silicon wafers by ion beam en－hance deposition at different O2 pressure. X－ray Photo－electron Spectroscopy, X－ray diffraction (XRD), glancing angle diffraction and Rutherford backscattering spectroscopy(RBS) were used to analyse the composition, structure and orientation of the film. It was found that: 1) The film is polycrystal－line with Ti2＋, Ti3＋, Ti4＋coexist. 2) When O2 pressure is lower than 8.4× 10－4 Pa, the main composition of the film is TiO that preferred orientation changed from (220) to (031) with the increase of O2 pressure. 3) When the O2 pressure is above 8.6× 10－4 Pa, rutile TiO2 with a preferred orientation of (100) is foundto be the major composition of the film.
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